to ? 92 1.emitter 2.base 3.collect or jiangsu changjiang elec tronics technology co., ltd to -92 plastic-encapsulate transistors MPSA05 transistor (npn) features general purpose amplifier www . cj- ele c . c om 1 , , 2 0 1 colle c tor - base voltage 6 0 v colle c tor - emitter voltage 6 0 v emitter - base voltage 4 v colle c tor curre nt - continuous 0 .5 a colle c tor po w er dissipation 625 mw jun c tion temperature 1 st orage t emperature - 55 t hermal resist an c e rom jun c tion o ambient / w 2 00 equivalent circuit mps to-92 bulk 1000pcs/bag tape 2000pcs/box
www.cj-elec.com parameter symbol test conditions min typ max unit co llector-base breakdown voltage v (br)cbo i c = 0 . 1 m a,i e = 0 60 v co llector-emitter breakdown voltage v (br)ceo i c =1 m a,i b = 0 60 v emitter-b ase breakdown voltage v (br)ebo i e =0 . 1 m a,i c =0 4 v co llector cut-off current i cbo v cb = 60v,i e = 0 0 . 1 a co llector cut-off current i ceo v ce = 60v,i b = 0 0 . 1 a emitter cut-off current i ebo v eb =3 v,i c =0 1 a h fe(1) v ce =1 . 0v , i c = 100 m a 100 dc cu rrent gain h fe(2) v ce =1 . 0v , i c = 10 m a 100 co llector-emitter saturation voltage v ce (sat) i c = 100 m a,i b = 10 m a 0 . 25 v base-emitter v oltage v be i c = 100 m a, v ce = 1 . 0v 1 . 2 v tra nsition frequency f t v ce =2 . 0v,i c = 10 m a,f=100mhz 100 mhz a t =25 unless otherwise specified
3 3 a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d4. + 4.700 , - , . d1 3.430 0.135 e 4.300 4. 700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 ! ( ( - 1.270 typ 0.050 typ &89"-.*& ( &89 ** " 4 ///,%0%,% $ + ''
&89 7 d s h d q g 5 h h o z z z f m h o h f f r p 1 22345
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